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Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.

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Zero Gate Voltage Drain Current. These packages have a Lead-free second level interconnect. Case-to-Sink, Flat, Greased Surface. Copy your embed code and put on your site: Operating Junction and Storage Temperature Range.

Popular transistors.

rif630 Gate charge vs gate-source voltage Figure The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Unclamped Inductive load test circuit Figure Test circuit for inductive load switching and diode recovery times Figure IRF datasheet and specification datasheet.


Switching times test circuit for resistive load Figure The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

I SM p – n junction diode.

L S die contact. The maximum ratings related to soldering conditions are also marked on the inner box label.

Vishay Intertechnology Electronic Components Datasheet. Repetitive Avalanche Current a. Soldering Recommendations Peak Temperature.

IRF datasheet and specification datasheet Download datasheet. Pulsed Diode Forward Current a.

IRF630 MOSFET. Datasheet pdf. Equivalent

Drain-Source Body Diode Characteristics. Unclamped inductive waveform Figure Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure N-channel V – 0. Capacitance variations Figure Elcodis is a trademark of Elcodis Company Ltd.

IRF Datasheet, PDF – Alldatasheet

The low thermal resistance. Prev Next General features. Body Diode Reverse Recovery Charge. Gate charge test circuit Figure V DS Temperature Coefficient. Contents Contents 1 Electrical ratings.

Download datasheet Kb Share this page. Single Pulse Avalanche Energy b. Repetitive rating; pulse width limited by maximum junction temperature see fig. Thermal impedance for TO Figure 4. Pulsed Drain Current a. This datasheet is subject to change without notice. The TOAB package is universally preferred for all.


Repetitive Avalanche Energy a. View PDF for Mobile.

IRF Datasheet(PDF) – International Rectifier

irf6330 Pulse width limited by safe operating area 2. Body Diode Reverse Recovery Time. Continuous Source-Drain Diode Current. Electrical characteristics Figure All other trademarks are the property of their respective owners. Safe operating area for TO Figure 3.